Method for forming a capacitor structure

Details Method for forming a capacitor structure Method for forming a capacitor structure

1998-08-17

2000-08-22

Thomas, Tom

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 257306, H01L 218242

Patent

active

061071366

ABSTRACT:
A dielectric film (110) is formed overlying a semiconductor device substrate (10). A dielectric post (204) having an outer peripheral boundary having sidewalls is formed over the dielectric film (110). A first conductive film (402) is deposited at least along the sidewalls of the dielectric post (204) to form a lower electrode. A capacitor dielectric film (1801) is deposited on the first conductive film, and a upper electrode (1802) is formed on the capacitor dielectric film (1801).

REFERENCES:
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patent: 5861647 (1999-01-01), Zhao et al.
patent: 5892282 (1999-04-01), Hong et al.
patent: 5907772 (1999-05-01), Iwasaki
patent: 5909621 (1999-06-01), Hsia
patent: 5968851 (1999-10-01), Geha et al.
patent: 5972722 (1999-10-01), Visokay et al.
patent: 5973351 (1999-10-01), Kotecki et al.
patent: 5981331 (1999-11-01), Tsumemine
patent: 5981377 (1999-11-01), Koyama

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