Method for forming a capacitor for an integrated circuit and...

Details Method for forming a capacitor for an integrated circuit and... Method for forming a capacitor for an integrated circuit and...

2007-08-21

2007-08-21

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S255000, C257SE21396

Reexamination Certificate

active

10891051

ABSTRACT:
Integrated circuits can include an integrated capacitor with a metal alloy layer. Methods for forming such integrated circuits can include providing a substrate, forming a first electrode including depositing a metal alloy layer having a first surface and an exposed second surface, etching the exposed second surface of the metal alloy layer thereby increasing the surface roughness of the second surface of the metal alloy layer, forming a capacitor dielectric on the first electrode and forming a second electrode on the capacitor dielectric. By providing a metal alloy layer and etching the second surface of the metal alloy layer, an increased capacitance of the integrated capacitor is achieved.

REFERENCES:
patent: 5182232 (1993-01-01), Chhabra et al.
patent: 5354705 (1994-10-01), Mathews et al.
patent: 5723373 (1998-03-01), Chang et al.
patent: 6194755 (2001-02-01), Gambino et al.
patent: 6448131 (2002-09-01), Cabral et al.
patent: 2004/0040863 (2004-03-01), Lee et al.
patent: 2004/0185636 (2004-09-01), Marsh
patent: 1 298 716 (2003-04-01), None

Affiliated with

Also associated with

Rating

Method for forming a capacitor for an integrated circuit and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a capacitor for an integrated circuit and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a capacitor for an integrated circuit and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3874917