Method for forming a capacitor

Details Method for forming a capacitor Method for forming a capacitor

1996-06-10

1998-07-07

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, H01L 218242

Patent

active

057768099

ABSTRACT:
A capacitor and a method for forming a capacitor is described and which includes providing a node location to which electrical connection to a capacitor is to be made; providing an amorphous inner capacitor plate layer of a first material atop the node location; providing a capacitor dielectric layer outwardly of the first material; after providing the capacitor dielectric layer, rendering the first material to be polycrystalline; providing an electrically conductive outer capacitor plate layer outwardly of the capacitor dielectric layer; and providing the first material to be electrically conductive. The capacitor formed by the present method exhibits current leakage characteristics which are substantially symmetrical with respect to both positive and negative voltage bias and characterized by differences between the positive and negative voltage bias being within less than about 10 percent for a predetermined voltage.

REFERENCES:
patent: 5371039 (1994-12-01), Oguro

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