Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-29
2008-04-29
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C257SE21646
Reexamination Certificate
active
07364966
ABSTRACT:
A method for use during fabrication of a semiconductor device comprises the formation of buried digit lines and contacts. During formation, a buried bit line layer may be used as a mask to etch one or more openings in a dielectric layer. A conductive layer is then formed in the one or more openings in the dielectric layer, and is then planarized to form one or more individual contact plugs. Next, the buried bit line layer is etched to recess the buried bit line layer, and a capacitor plate is formed to contact the contact plug.
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Copending US application: “Semiconductor Structures, and Methods of Forming Semiconductor Constructions,” Terrence B. McDaniel et al., filed Apr. 6, 2005, U.S. Appl. No. 11/099,972.
Green James E.
McDaniel Terrence B.
Booth Richard A.
Micro)n Technology, Inc.
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