Method for forming a bit line of a semiconductor device

Details Method for forming a bit line of a semiconductor device Method for forming a bit line of a semiconductor device

2005-04-05

2005-04-05

Whitehead, Jr., Carl (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

06875684

ABSTRACT:
A method for forming a bit line of a semiconductor device, in which tungsten is deposited just after depositing a metallic barrier layer, a nitride layer is deposited after forming a bit line to prevent the bit line from oxidation due to the exposure of tungsten, and then a rapid thermal treatment is performed, whereby the contact resistance of the bit line is stabilized, and an additional process of depositing TiN due to the micro crack generated by the rapid thermal treatment is not needed, so the manufacturing process becomes simple and the productivity of manufacturing the semiconductor device is improved.

REFERENCES:
patent: 5411911 (1995-05-01), Ikeda et al.
patent: 5840621 (1998-11-01), Kasai
patent: 6188115 (2001-02-01), Kamitani
patent: 6197673 (2001-03-01), Yu
patent: 6294451 (2001-09-01), Yoshizawa

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