Method for forming a bipolar junction transistor and a metal...

Details Method for forming a bipolar junction transistor and a metal... Method for forming a bipolar junction transistor and a metal...

2010-07-08

2011-12-27

Dang, Phuc (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S205000, C438S224000, C257S197000, C257S370000

Reexamination Certificate

active

08084313

ABSTRACT:
A method for forming BiCMOS integrated circuits and structures formed according to the method. After forming doped wells and gate stacks for the CMOS devices and collector and base regions for the bipolar junction transistor, an emitter layer is formed within an emitter window. A dielectric material layer is formed over the emitter layer and remains in place during etching of the emitter layer and removal of the etch mask. The dielectric material layer further remains in place during source/drain implant doping and activation of the implanted source/drain dopants. The dielectric material layer functions as a thermal barrier, to limit out-diffusion of the emitter dopants during the activation step.

REFERENCES:
patent: 4921811 (1990-05-01), Watanabe et al.
patent: 5334549 (1994-08-01), Eklund
patent: 6248650 (2001-06-01), Johnson
patent: 6602747 (2003-08-01), Yang et al.
patent: 6686250 (2004-02-01), Kalnitsky et al.
patent: 6797580 (2004-09-01), Yin et al.
patent: 7319251 (2008-01-01), Minixhofer et al.
patent: 7439119 (2008-10-01), Nanda et al.
patent: 2001/0002061 (2001-05-01), Johnson
patent: 2005/0020003 (2005-01-01), Johansson et al.
patent: 2005/0040470 (2005-02-01), Chuang et al.
patent: 2006/0252215 (2006-11-01), Kerr et al.
patent: 2007/0069295 (2007-03-01), Kerr et al.
patent: 2007/0202642 (2007-08-01), Nanda et al.
patent: 2008/0230869 (2008-09-01), Ho et al.
patent: 2009/0011553 (2009-01-01), Nanda et al.

Affiliated with

Also associated with

Rating

Method for forming a bipolar junction transistor and a metal... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a bipolar junction transistor and a metal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a bipolar junction transistor and a metal... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4264029