Method for forming a BiCMOS integrated circuit with Nwell compen

Details Method for forming a BiCMOS integrated circuit with Nwell compen Method for forming a BiCMOS integrated circuit with Nwell compen

1998-07-15

2000-10-10

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438234, 438350, H01L 218238, H01L 218249, H01L 21331

Patent

active

061301221

ABSTRACT:
A BiCMOS integrated circuit with Nwell compensation implants and a method for fabricating the same is disclosed. In accordance with the method of fabricating a BiCMOS integrated circuit, a plurality of Nwell regions are created in a semiconductor substrate. At least some of the Nwell regions comprise lightly doped collector regions of bipolar transistors while others of the Nwell regions comprise Nwell regions of MOS transistors. A plurality of isolation regions are created to electrically isolate at least some of the Nwell regions. A p-type dopant is implanted in at least some of the lightly doped collector regions of the bipolar transistors.

REFERENCES:
patent: 4717686 (1988-01-01), Jacobs et al.
patent: 5089429 (1992-02-01), Hsu
patent: 5605849 (1997-02-01), Chen et al.
patent: 5726069 (1998-03-01), Chen et al.

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