Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1995-04-25
2000-03-14
Gorgos, Kathryn
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427578, 438585, C23C 1650, H01L 21336, H01L 21443
Patent
active
060370173
ABSTRACT:
A method for forming a multilayer film by introducing a material gas into a reduced-pressure reaction chamber provided with a pair of parallel planer electrodes and supplying a high-frequency electric power to the electrodes thereby generating a plasma state therein and depositing a film on a substrate disposed on one of the electrodes, comprising the steps of (a) introducing a first material gas into the reaction chamber and supplying the high-frequency electric power to the electrodes thereby generating the plasma state and depositing a first film on the substrate, (b) introducing stepwise a preparatory gas and adjusting stepwise a distance between the electrodes, a pressure inside the chamber and a RF power supplied to the electrodes while continuously retaining the plasma state subsequently to step (a), and (c) introducing a second material gas into the reaction chamber while continuously retaining the plasma state thereby and depositing a second film on the first film. According to the method the surface between the films is desirably formed, and this cause a promotion of characteristics when applied to produce a multilayer films constitutes semiconductor device, a TFT and a solar cell for example.
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R. W. Berry et al. Thin Film Technology. Van Nostrand Reinhold Company, New York, pp. 191-209, 1968, month of application not available.
L. I. Maissel, Handbook of Thin Film Technology, McGraw-Hill Book Co., New York, pp. 4-1 to 4-13, 1970, month of application not available.
J.L. Vossen et al. Thin Film Technology. Academic Press, New York, pp. 24-33, and 499-501, 1978, month of application not available.
Gorgos Kathryn
Kabushiki Kaisha Toshiba
Leader William T.
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