Method for formation of capacitors

Details Method for formation of capacitors Method for formation of capacitors

1996-12-18

1998-12-15

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438397, H01L 218242, H01L 2120

Patent

active

058496190

ABSTRACT:
A method of forming a capacitor for a DRAM includes the steps of: forming an insulating layer with a contact hole on a substrate; forming a first conductive layer on the insulating layer and in the contact hole; forming a temporary layer pattern on a portion of the first conductive layer corresponding to the contact hole; forming a second conductive layer on the first conductive layer and on the temporary layer pattern; selectively implanting oxygen ions into the first and second conductive layers except a portion of the second conductive layer corresponding to a side face of the temporary layer pattern; heat treating so as to convert the oxygen-ion-implanted first and second conductive layer portions into an oxide; removing the oxide and temporary layer pattern; forming a dielectric layer on the surface of the first and second conductive layers; and forming a third conductive layer on the dielectric layer.

REFERENCES:
patent: 5429972 (1995-07-01), Anjum et al.
patent: 5688726 (1997-11-01), Kim
patent: 5726086 (1998-03-01), Wu
"A Stacked Capacitor Cell with Ring Structures," Shinmura et al., Extended Abstracts of 22nd (1990 International) Conference on Solid State Devices and Materials, 1990, pp. 833-836.
Crown-Shaped Stacked-Capacitor Cell for 1.5-V Operation 64-Mb DRAMs, Toru Kaga et al., IEEE Transactions on Electron Devices, vol. 38, No. 2, Feb. 1991, pp. 255-260.

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