Method for formation of an ultra-thin film and semiconductor...

Details Method for formation of an ultra-thin film and semiconductor... Method for formation of an ultra-thin film and semiconductor...

2007-01-30

2007-01-30

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S240000, C438S199000, C438S287000, C257SE21011

Reexamination Certificate

active

10767928

ABSTRACT:
A method of manufacturing an ultra-thin PZT pyrochlore film comprises providing a structure comprising a base layer, and forming on the base layer, a titanium layer and a PZT layer in mutual contact. The structure is annealed to form a PZT pyrochlore layer on said base layer. Novel devices with an ultra-thin PZT layer may thereby be manufactured.

REFERENCES:
patent: 5572052 (1996-11-01), Kashihara et al.
patent: 6674109 (2004-01-01), Fujimori et al.
patent: 2002/0123158 (2002-09-01), Murai
patent: 2003/0054572 (2003-03-01), Fujimori
patent: 821415 (1998-01-01), None

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