Etching a substrate: processes – Masking of a substrate using material resistant to an etchant – Mask resist contains organic compound
Patent
1996-03-20
1997-07-15
Powell, William
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
Mask resist contains organic compound
1566431, 15665911, 216 43, 216 67, B44C 122, H01L 2100
Patent
active
056479999
ABSTRACT:
A unique method is proposed for fine patterning of a polymeric resin film on a substrate surface or fine patterning of the substrate surface with the patterned resin film as the resist. The method comprises the steps of: (a) forming a thin film of the resin on the substrate surface; (b) pressing the resin film pattern-wise under a pressure in a specified range by using, for example, a fine needle tip so as to enhance adhesion of the resin molecules to the substrate surface; and (c) dissolving away the resin film with an organic solvent selectively in the areas where the pressure is not applied in step (c) leaving the resin in a pattern-wise area after application of the pressure. The fineness of this patterning can be extremely high to be in the molecular size order.
REFERENCES:
patent: 5198073 (1993-03-01), Ishibashi
patent: 5275689 (1994-01-01), Felten et al.
Kanayama Toshihiko
Tada Tetsuya
Japan as represented by Director General of Agency of Industrial
Powell William
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