Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1984-11-19
1986-05-20
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430197, 430296, 430330, 430967, G03F 726
Patent
active
045901490
ABSTRACT:
A method for high-fidelity fine patterning of a photoresist layer involving a dry-process development by exposure to a plasma gas. Following irradiation in a pattern with actinic rays, a photoresist layer coated on a substrate is heated in an atmosphere at 200.degree. to 500.degree. C. Subsequent exposure of the photoresist layer to a plasma gas gives a finely patterned resist layer with a very high residual film ratio or very small decrease in the film thickness.
REFERENCES:
patent: 4015986 (1977-04-01), Paal et al.
patent: 4241165 (1980-12-01), Hughes et al.
patent: 4292384 (1981-09-01), Stroughan et al.
patent: 4307176 (1981-12-01), Mochiji et al.
patent: 4388397 (1983-06-01), Kanai
patent: 4401745 (1983-08-01), Nokane et al.
patent: 4433044 (1984-02-01), Meyer et al.
patent: 4439516 (1984-03-01), Cernigliaro et al.
patent: 4465768 (1984-08-01), Ueno et al.
patent: 4540650 (1985-09-01), Klug et al.
patent: 4547455 (1985-10-01), Hiramoto et al.
patent: 4551409 (1985-11-01), Gulla et al.
Walker, E. J., IEEE Transactions on Electron Devices, vol. ed-22, No. 7, 7/1975.
Ishii Wataru
Nakane Hisashi
Tsuda Minoru
Yabuta Mitsuo
Yokota Akira
Bowers Jr. Charles L.
Tokyo Ohka Kogyo Co. Ltd.
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