Method for fabrication of polycrystalline diodes for...

Details Method for fabrication of polycrystalline diodes for... Method for fabrication of polycrystalline diodes for...

2011-06-07

2011-06-07

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S102000, C257SE21412

Reexamination Certificate

active

07955958

ABSTRACT:
The present invention, in one embodiment, provides a method of producing a PN junction the method including at least the steps of providing a Si-containing substrate; forming an insulating layer on the Si-containing substrate; forming a via through the insulating layer to expose at least a portion of the Si-containing substrate; forming a seed layer of the exposed portion of the Si containing substrate; forming amorphous Si on at least the seed layer; converting at least a portion of the amorphous Si to provide crystalline Si; and forming a first dopant region abutting a second dopant region in the crystalline Si.

REFERENCES:
patent: 5275851 (1994-01-01), Fonash et al.
patent: 2005/0062079 (2005-03-01), Wu et al.
patent: 2006/0186483 (2006-08-01), Cho et al.

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