Method for fabrication of MOSFET with buried gate

Details Method for fabrication of MOSFET with buried gate Method for fabrication of MOSFET with buried gate

2005-02-22

2005-02-22

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S328000

Reexamination Certificate

active

06858499

ABSTRACT:
An insulation is formed on a substrate of a material having a first conductivity type. A gate material is formed on the insulation. A portion of the gate material is removed thereby creating forming mesa type gate structures from remaining positions of the gate material. The mesas are then insulated. A channel forming layer, of a material having a second conductivity type, is formed between the produced mesas. Finally, a source of a material having the first conductivity type is formed on the channel forming layer.

REFERENCES:
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patent: 5554862 (1996-09-01), Omura et al.
patent: 6069043 (2000-05-01), Floyd et al.
patent: 6075269 (2000-06-01), Terasawa et al.
patent: 6172398 (2001-01-01), Hshieh
patent: 6262470 (2001-07-01), Lee et al.
patent: 20020038886 (2002-04-01), Mo

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