Method for fabrication of field-effect transistor to reduce...

Details Method for fabrication of field-effect transistor to reduce... Method for fabrication of field-effect transistor to reduce...

2005-06-14

2005-06-14

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S046000, C438S289000, C438S486000, C438S795000

Reexamination Certificate

active

06905920

ABSTRACT:
A method for the fabrication of a field-effect transistor wherein after forming a semiconductor layer serving as an active layer on a substrate, the substrate temperature is set at no higher than 100° C., a gate insulating film is formed on the semiconductor layer. Then, the gate insulating film is heat treated in an atmosphere containing water. By heat treating in the atmosphere containing water, OH bonds in the vicinity of the insulating film interface are reduced and, therefore, the CV characteristic thereof is improved.

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