Method for fabrication of a semiconductor sensor

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

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438 48, 7351416, H01L 2100

Patent

active

061435848

ABSTRACT:
A semiconductor sensor has gauge resistors. The gauge resistors connect with aluminum electrodes through contact holes, and form a bridge circuit. The gauge resistors are formed on each chip area of a semiconductor substrate before dicing the chip areas. Then, the resistances of the gauge resistors or the output of the bridge circuit are measured. Contact positions of the gauge resistors or the size and/or shape of the contact holes are adjusted based on the result of the measurement in order to adjust the offset voltage of the bridge circuit formed on each chip area.

REFERENCES:
patent: 4613230 (1986-09-01), Iwai
patent: 5643803 (1997-07-01), Fukada et al.
patent: 5900631 (1999-05-01), Sano

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