Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-07-17
1999-02-23
Trinh, Michael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438305, 438595, H01L 21336
Patent
active
058743405
ABSTRACT:
The method for fabrication of a non-symmetrical IGFET of the present invention includes providing a semiconductor substrate having an insulating film and a gate material. A first portion of the gate material overlying a first region of the semiconductor substrate is removed forming a first sidewall of a gate electrode A dopant is implanted into the first region after forming the first sidewall. After the first region is implanted, a second portion of the gate material overlying a second region of the semiconductor substrate is then removed forming a second sidewall of the gate electrode. A dopant is implanted into the second region after forming the second sidewall. Spacers are formed adjacent to each of the sidewalls of the gate electrode. Then, a dopant is then implanted into portions of the first and second regions of the semiconductor substrate outside the gate electrode and the spacers. In one embodiment of the invention, the first region is a heavily doped source region and the second region is a lightly doped drain region. In another embodiment of the present invention the first region is a lightly doped drain region and the second region is a heavily doped source region. In both embodiments, a part of the lightly doped drain region is retained beneath a spacer.
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Fulford Jr. H. Jim
Gardner Mark I.
Wristers Derick J.
Advanced Micro Devices , Inc.
Trinh Michael
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