Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-09-13
1997-08-05
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438305, 438911, H01L 218234
Patent
active
056542151
ABSTRACT:
In the present invention, a method for fabrication of a non-symmetrical LDD-IGFET is described. In one embodiment, a gate insulator and a gate electrode, such as a polysilicon, are formed over a semiconductor substrate, the gate electrode having a top surface and opposing first and second sidewalls. A first dopant is implanted into the semiconductor substrate to provide a lightly doped drain region substantially aligned with the second sidewall. First and second symmetrical spacers are then formed adjacent the first and second sidewalls, respectively. A second dopant is implanted into the semiconductor substrate after forming the symmetrical spacers to provide a moderately-lightly doped drain region substantially aligned with the outer region of the second symmetrical spacer. After implanting the second dopant, first and second non-symmetrical spacers are formed adjacent the first and second sidewalls, respectively. A heavy dose of a third dopant is then implanted into the semiconductor substrate to provide a heavily doped source region and a heavily doped drain region. In another embodiment, a fourth dopant is implanted into the semiconductor substrate before forming the first and second symmetrical spacers further doping the lightly doped drain region.
REFERENCES:
patent: 5171700 (1992-12-01), Zamanian
patent: 5286664 (1994-02-01), Horiuchi
patent: 5424229 (1995-06-01), Oyamatsu
patent: 5424234 (1995-06-01), Kwon
patent: 5518940 (1996-05-01), Hodate et al.
patent: 5585293 (1996-12-01), Sharma et al.
Dawson Robert
Gardner Mark I.
Kadosh Daniel
Advanced Micro Devices , Inc.
Chaudhari Chandra
Sigmond David M.
Thomas Toniae M.
Tsirigotis M. Kathryn
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