Method for fabrication of a capacitor, and a monolithically...

Details Method for fabrication of a capacitor, and a monolithically... Method for fabrication of a capacitor, and a monolithically...

2011-01-18

2011-01-18

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S247000, C438S269000, C438S311000, C438S479000, C257SE21561, C257SE21562, C257SE21564, C257SE21703, C257SE27112

Reexamination Certificate

active

07871881

ABSTRACT:
A method for fabrication of a monolithically integrated SOI substrate capacitor has the steps of: forming an insulating trench, which reaches down to the insulator and surrounds a region of the monocrystalline silicon of a SOI structure, doping the monocrystalline silicon region, forming an insulating, which can be nitride, layer region on a portion of the monocrystalline silicon region, forming a doped silicon layer region on the insulating layer region, and forming an insulating outside sidewall spacer on the monocrystalline silicon region, where the outside sidewall spacer surrounds the doped silicon layer region to provide an isolation between the doped silicon layer region and exposed portions of the monocrystalline silicon region. The monocrystalline silicon region, the insulating layer region, and the doped silicon layer region constitute a lower electrode, a dielectric, and an upper electrode of the capacitor.

REFERENCES:
patent: 7029994 (2006-04-01), Ge et al.
patent: 7618865 (2009-11-01), Johansson et al.
patent: 2007/0048928 (2007-03-01), Johansson et al.

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