Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1995-04-11
1998-03-31
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438279, H01L 218234
Patent
active
057338116
ABSTRACT:
An epitaxial layer of a first conductivity type is grown on a main surface of a semiconductor substrate of the first conductivity type. After a gate oxide film is formed on the entire surface of the epitaxial layer, a gate electrode made of polysilicon and having a plurality of stripe sections and an electrode leading-out section is formed. Then, ions are implanted using a first resist and the gate electrode and a deep well of a second conductivity type for raising a drain breakdown characteristic is formed in the surface region of the epitaxial layer by conducting a thermal oxidation process. After ions are implanted using a second resist and the gate electrode, a plurality of bases of the second conductivity type are formed in the surface region of the epitaxial layer by conducting a thermal oxidation process. These bases are connected with one another immediately below a part of each stripe section which part is near the electrode leading-out section of the gate electrode. This arrangement of a vertical MOSFET prevents the inversion of the P-type well to N-type.
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Dutton Brian K.
NEC Corporation
Tsai Jey
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