Method for fabricating vertical channel type nonvolatile...

Details Method for fabricating vertical channel type nonvolatile... Method for fabricating vertical channel type nonvolatile...

2009-06-29

2011-11-01

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S268000, C438S269000, C257S296000, C257S302000

Reexamination Certificate

active

08048743

ABSTRACT:
A method for fabricating a vertical channel type nonvolatile memory device includes: stacking a plurality of interlayer insulating layers and a plurality of gate electrode conductive layers alternately over a substrate; etching the interlayer insulating layers and the gate electrode conductive layers to form a channel trench exposing the substrate; forming an undoped first channel layer over the resulting structure including the channel trench; doping the first channel layer with impurities through a plasma doping process; and filling the channel trench with a second channel layer.

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patent: 2009/0184360 (2009-07-01), Jin et al.
patent: 54008981 (1979-01-01), None
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Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Apr. 12, 2011.

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