Method for fabricating trench/stacked capacitors on DRAM cells w

Details Method for fabricating trench/stacked capacitors on DRAM cells w Method for fabricating trench/stacked capacitors on DRAM cells w

1996-10-22

1997-09-09

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438387, 438249, H01L 218242

Patent

active

056656246

ABSTRACT:
A method is described for making an array of dynamic random access memory (DRAM) cells having a trench/stacked capacitor within each cell. The method involves forming trenches in the silicon substrate at the capacitor node contact areas of the DRAM cells, and using liquid phase deposition (LPD) of silicon oxide in the trenches to form oxide plugs that extend upward into the openings in the photoresist mask used to etch the trenches. After removing the photoresist, polysilicon sidewall spacers are formed on the LPD oxide plugs. The sidewall spacers become part of the stacked capacitor structures. Another patterned polysilicon layer is used to form the array of storage-node electrodes for the stacked capacitors, and also serve as the storage-node electrodes for the trench capacitors. Conventional methods are used to complete the array of trench/stacked capacitors by depositing an interelectrode dielectric layer and then forming the polysilicon top electrodes.

REFERENCES:
patent: 5066608 (1991-11-01), Kim et al.
patent: 5183772 (1993-02-01), Motonami
patent: 5234856 (1993-08-01), Gonzales
patent: 5362664 (1994-11-01), Jun
patent: 5521111 (1996-05-01), Sato

Affiliated with

Also associated with

Rating

Method for fabricating trench/stacked capacitors on DRAM cells w does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating trench/stacked capacitors on DRAM cells w, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating trench/stacked capacitors on DRAM cells w will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-69449