Method for fabricating trench power device

Details Method for fabricating trench power device Method for fabricating trench power device

2006-10-10

2006-10-10

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C257S330000, C257S333000, C257SE29200, C257SE21400

Reexamination Certificate

active

07118971

ABSTRACT:
Embodiments of the invention relate to a fabrication method of an electronic device, more particularly to a fabrication method of a power device in which an oxide layer at the bottom of the trench is provided to reduce Miller capacitance and further reduce RC delay. In one embodiment, a method for forming an oxide layer at the bottom of a trench comprises providing a first substrate with at least one trench therein; forming a first oxide layer on the bottom and sidewalls of the trench; removing the first oxide layer at the bottom of the trench; and forming a second oxide layer at the bottom of the trench.

REFERENCES:
patent: 6319776 (2001-11-01), Tung
patent: 6437386 (2002-08-01), Hurst et al.
patent: 6444528 (2002-09-01), Murphy
patent: 2004/0014263 (2004-01-01), Fujishima et al.

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