Method for fabricating trench MOSFET

Details Method for fabricating trench MOSFET Method for fabricating trench MOSFET

2007-12-05

2009-12-29

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S288000, C257SE21214, C257SE21002

Reexamination Certificate

active

07638394

ABSTRACT:
A method for fabricating a semiconductor device, such as a trench MOSFET device, is provided. The method includes: forming a hard mask on an upper surface of a semiconductor substrate; forming an opening in the hard mask to expose a portion of the semiconductor substrate; forming a trench in the semiconductor substrate by etching the semiconductor substrate using the hard mask as an etch mask; forming a gate insulating film on inner walls of the trench; forming a conductive film on the gate insulating film and at least a portion of the hard mask, the conductive film filling the trench; forming a patterned conductive film in the trench by etching the conductive film; removing the hard mask; and forming a gate electrode by polishing the patterned conductive film until an upper surface of the patterned conductive film aligns with the upper surface of the semiconductor substrate.

REFERENCES:
patent: 7075145 (2006-07-01), Williams et al.
patent: 2005/0090068 (2005-04-01), Park
patent: 2006/0270149 (2006-11-01), Lee
patent: 2007/0259498 (2007-11-01), Chang et al.

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