Method for fabricating trench metal-oxide-semiconductor...

Details Method for fabricating trench metal-oxide-semiconductor... Method for fabricating trench metal-oxide-semiconductor...

2006-11-30

2009-11-10

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C257SE27099

Reexamination Certificate

active

07615442

ABSTRACT:
A method for fabricating a trench metal-oxide-semiconductor field effect transistor is disclosed. The method comprises steps of providing a substrate with an epitaxy layer thereon and etching the epitaxy layer to form a trench structure; forming a gate oxide layer on the surface of the epitaxy layer and the inner sidewalls of the trench structure and depositing a polysilicon layer to fill the trench structure; introducing a nitrogen gas and performing a driving-in procedure to form a body structure; performing an implantation procedure to form a source layer; forming a dielectric layer on the trench structure and the source layer; etching the dielectric layer and the source layer to define a source structure and form a contact region; filling the contact region with a contact structure layer; and forming a conductive metal layer on the contact structure layer and the dielectric layer.

REFERENCES:
patent: 7135738 (2006-11-01), Williams et al.
patent: 2004/0259318 (2004-12-01), Williams et al.

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