Method for fabricating trench isolation

Details Method for fabricating trench isolation Method for fabricating trench isolation

2005-10-25

2005-10-25

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S435000, C438S437000

Reexamination Certificate

active

06958283

ABSTRACT:
A method for forming a trench isolation. A semiconductor substrate with an opening is provided, on which a mask layer is formed. A first insulating layer is conformably formed on the semiconductor substrate and the trench, and the trench is filled with the first insulating layer. The first insulating layer is anisotropically etched to below the semiconductor substrate. A second insulating layer is formed on the semiconductor substrate and the trench. The second insulating layer is planarized to expose the mask layer.

REFERENCES:
patent: 6225225 (2001-05-01), Goh et al.
patent: 6391784 (2002-05-01), Ibok
patent: 6566229 (2003-05-01), Hong et al.
patent: 6593207 (2003-07-01), Hong et al.
patent: 6713365 (2004-03-01), Lin et al.
patent: 2005/0016948 (2005-01-01), Yang et al.
patent: 540135 (2003-07-01), None

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