Method for fabricating transistor with polymetal gate electrode

Details Method for fabricating transistor with polymetal gate electrode Method for fabricating transistor with polymetal gate electrode

2006-04-18

2006-04-18

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S592000, C438S653000, C438S657000

Reexamination Certificate

active

07029999

ABSTRACT:
The present invention is related to a method for fabricating a transistor with a polymetal gate electrode structure. The method includes the steps of: forming a gate insulation layer on a substrate; forming a patterned gate stack structure on the gate insulation layer, wherein the patterned stack structure includes a polysilicon layer as a bottom layer and a metal layer as an upper layer; forming a silicon oxide-based capping layer along a profile containing the patterned gate stack structure and on the gate insulation layer at a predetermined temperature that prevents oxidation of the metal layer; and performing a gate re-oxidation process.

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