Method for fabricating transistor with polymetal gate electrode

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

Reexamination Certificate

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C438S592000, C438S653000, C438S657000

Reexamination Certificate

active

07029999

ABSTRACT:
The present invention is related to a method for fabricating a transistor with a polymetal gate electrode structure. The method includes the steps of: forming a gate insulation layer on a substrate; forming a patterned gate stack structure on the gate insulation layer, wherein the patterned stack structure includes a polysilicon layer as a bottom layer and a metal layer as an upper layer; forming a silicon oxide-based capping layer along a profile containing the patterned gate stack structure and on the gate insulation layer at a predetermined temperature that prevents oxidation of the metal layer; and performing a gate re-oxidation process.

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