Method for fabricating transistor of semiconductor device

Details Method for fabricating transistor of semiconductor device Method for fabricating transistor of semiconductor device

2007-12-04

2007-12-04

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S206000, C438S558000, C438S520000, C438S525000, C438S585000, C438S595000, C257SE21135, C257SE21136, C257SE21137, C257SE21138, C257SE21139, C257SE21140, C257SE21141, C257SE21142, C257SE21143, C257SE21144, C257SE21145, C257SE21146, C257SE21147, C257SE21148, C257SE21149, C257SE21150, C257SE21151, C257SE21152, C257SE21153

Reexamination Certificate

active

10874932

ABSTRACT:
Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an LDD ion implantation layer; forming an insulation spacer on a sidewall of the gate electrode; forming a diffusion barrier; performing a high-density ion implantation process with respect to the substrate, thereby forming a source/drain; performing a first thermal treatment process with respect to a resultant structure, so as to activate impurities in the source/drain, and simultaneously causing a diffusion velocity of the impurities in the source/drain to be reduced by the diffusion barrier; and forming a salicide layer.

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