Method for fabricating transistor of semiconductor device

Details Method for fabricating transistor of semiconductor device Method for fabricating transistor of semiconductor device

2005-08-30

2005-08-30

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S585000, C438S592000

Reexamination Certificate

active

06936517

ABSTRACT:
A method of fabricating a transistor of a semiconductor device is disclosed. The method of fabricating a transistor comprises forming a sacrificial layer on a substrate; forming a source/drain region in the substrate by performing a first ion implantation using the sacrificial layer as a mask; forming a barrier layer over the substrate with the sacrificial layer; removing a portion of the sacrificial layer to form an opening through which a portion of the substrate is exposed; performing a second ion implantation using the opening as a mask to implant ions for adjustment of a threshold voltage of the substrate; forming a gate electrode on the substrate exposed through the opening; and performing a third ion implantation to adjust doping concentration in the gate electrode. Accordingly, the present invention can reduce the occurrences of a short channel effect and a reverse short channel effect in a transistor.

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patent: 2002/0081810 (2002-06-01), Mun et al.
patent: 2002/0137294 (2002-09-01), Wu et al.
patent: 2003/0040159 (2003-02-01), Sasaki
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patent: 2004/0043571 (2004-03-01), Watt
patent: 2002-184876 (2002-06-01), None

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