Method for fabricating transistor of semiconductor device

Details Method for fabricating transistor of semiconductor device Method for fabricating transistor of semiconductor device

2008-01-01

2008-01-01

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S270000, C438S274000, C438S297000, C438S298000, C438S362000, C438S370000, C438S423000, C438S700000, C438S425000, C257SE21429, C257SE21166, C257SE21548, C257SE21555, C257SE21553

Reexamination Certificate

active

07314792

ABSTRACT:
A method for fabricating a transistor of a semiconductor device is provided. The method includes: forming device isolation layers in a substrate including a bottom structure, thereby defining an active region; etching the active region to a predetermined depth to form a plurality of recess structures each of which has a flat bottom portion with a critical dimension (CD) larger than that of a top portion; and sequentially forming a gate oxide layer and a metal layer on the recess structures; and patterning the gate oxide layer and the metal layer to form a plurality of gate structures.

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