Method for fabricating transistor in a semiconductor device...

Details Method for fabricating transistor in a semiconductor device... Method for fabricating transistor in a semiconductor device...

2008-10-28

2010-12-14

Mai, Anh D (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C438S589000, C257SE21429

Reexamination Certificate

active

07851298

ABSTRACT:
Provided is a method for fabricating a transistor in a semiconductor device. The method includes forming an etch stop layer pattern over a semiconductor substrate; forming a semiconductor layer for covering the etch stop layer pattern; forming a recess trench that exposes an upper surface of the etch stop layer pattern by etching the semiconductor layer pattern; removing the etch stop layer pattern exposed in the recess trench; and forming a gate that fills the recess trench.

REFERENCES:
patent: 5861331 (1999-01-01), Chien
patent: 2007/0259499 (2007-11-01), Eun et al.
patent: 2008/0150021 (2008-06-01), Koops et al.
patent: 2008/0203483 (2008-08-01), Kuroki
patent: 10-2005-0004352 (2005-01-01), None
patent: 10-0713001 (2007-04-01), None
patent: 10-2008-0087518 (2008-10-01), None

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