Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-06-12
2007-06-12
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S906000, C257SE21094
Reexamination Certificate
active
11163602
ABSTRACT:
A method for fabricating a thin film transistor is provided. First, a gate is formed on a substrate. A gate-insulating layer is formed to cover the gate. A patterned semiconductor layer is formed on the gate-insulating layer. A first and a second conductive layer are formed on the patterned semiconductor layer in sequence. The second conductive layer is patterned such that each side of thereof above the gate has a taper profile and the first conductive layer is exposed. A first plasma process is performed to transform the surface and the taper profile of the second conductive layer into a first protection layer. The first conductive layer not covered by the first protection layer and the second conductive layer is removed to form a source/drain. The source/drain is with fine dimensions and the diffusion of metallic ions from the second conductive layer to the patterned semiconductor layer can be avoided.
REFERENCES:
patent: 5281546 (1994-01-01), Possin et al.
patent: 5821159 (1998-10-01), Ukita
patent: 6410372 (2002-06-01), Flewitt
patent: 6495383 (2002-12-01), Lyu
patent: 6841431 (2005-01-01), Lee et al.
patent: 2004/0241920 (2004-12-01), Hsiao et al.
Kuan Yung-Chia
Lai Chin-Chuan
Lu Chia-Chien
Wu Chuan-Yi
Booth Richard A.
Chunghwa Picture Tubes Ltd.
Jiang Chyun IP Office
LandOfFree
Method for fabricating thin film transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating thin film transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating thin film transistors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3843011