Method for fabricating superlattice semiconductor structure...

Details Method for fabricating superlattice semiconductor structure... Method for fabricating superlattice semiconductor structure...

2006-01-10

2009-02-03

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S930000, C117S098000, C117S107000, C427S255340

Reexamination Certificate

active

07485583

ABSTRACT:
The invention provides a method for fabricating a superlattice semiconductor structure capable of achieving excellent interfacial properties and uniformity. For the superlattice semiconductor structure according to the invention, a substrate is mounted on a susceptor within a process chamber. First and second source gases are supplied simultaneously to two different areas on the susceptor within the chamber to form first and second source gas areas separate from each other. The susceptor is rotated to revolve the substrate through the first and second source gas areas.

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