Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-04-19
2011-04-19
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S231000, C438S305000, C438S529000, C438S530000, C438S595000, C257SE21120, C257SE21131, C257SE21431, C257SE21433
Reexamination Certificate
active
07927954
ABSTRACT:
A method for fabricating strained-silicon transistors is disclosed. First, a semiconductor substrate is provided and a gate structure and a spacer surrounding the gate structure are disposed on the semiconductor substrate. A source/drain region is then formed in the semiconductor substrate around the spacer, and a first rapid thermal annealing process is performed to activate the dopants within the source/drain region. An etching process is performed to form a recess around the gate structure and a selective epitaxial growth process is performed to form an epitaxial layer in the recess. A second rapid thermal annealing process is performed to redefine the distribution of the dopants within the source/drain region and repair the damaged bonds of the dopants.
REFERENCES:
patent: 7227205 (2007-06-01), Bryant
patent: 2003/0211670 (2003-11-01), Downey
patent: 2005/0082616 (2005-04-01), Chen et al.
patent: 2006/0073665 (2006-04-01), Jain
patent: 2007/0184600 (2007-08-01), Zhang et al.
patent: 586182 (2004-05-01), None
patent: I305031 (2009-01-01), None
Chan Shu-Yen
Cheng Tzyy-Ming
Hsiao Tsai-fu
Huang Cheng-Tung
Hung Wen-Han
Hsu Winston
Margo Scott
Thomas Toniae M
United Microelectronics Corp.
Wilczewski Mary
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