Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-02
2011-08-02
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21649
Reexamination Certificate
active
07989287
ABSTRACT:
A method for fabricating a storage node electrode in a semiconductor device includes: performing a primary high density plasma (HDP) process to form a first HDP oxide film over an etch stop film; performing a secondary HDP process to form a second HDP oxide film on the first HDP oxide film; forming a support film over the second HDP oxide film; performing a tertiary HDP process to form a third HDP oxide film over the support film; forming a storage node electrode on an exposed surface of the storage node contact hole; partially removing the third HDP oxide film and the support film so that a support pattern supporting the storage node electrode is formed; and exposing an outer surface of the storage node electrode by removing the second HDP oxide film and the first HDP oxide film.
REFERENCES:
patent: 7067385 (2006-06-01), Manning
patent: 7572711 (2009-08-01), Park et al.
patent: 2007/0241380 (2007-10-01), Hasunuma
patent: 2009/0073736 (2009-03-01), Cho et al.
patent: 1020080088276 (2008-10-01), None
patent: 1020080088921 (2008-10-01), None
Chaudhari Chandra
Hynix / Semiconductor Inc.
Ladas & Parry LLP
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