Method for fabricating storage node contact hole of...

Details Method for fabricating storage node contact hole of... Method for fabricating storage node contact hole of...

2008-05-13

2008-05-13

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S210000, C438S253000, C438S397000, C438S597000, C257SE21267

Reexamination Certificate

active

07371636

ABSTRACT:
A method for fabricating a storage node contact hole of a semiconductor device includes: forming an inter-layer insulation layer over a substrate; forming a hard mask over the inter-layer insulation layer; etching the inter-layer insulation layer to form a storage node contact hole; forming a passivation layer to fill the storage node contact hole; removing the hard mask with an etch rate of the hard mask faster than that of the inter-layer insulation layer; and removing the passivation layer.

REFERENCES:
patent: 6368979 (2002-04-01), Wang et al.
patent: 2003/0203510 (2003-10-01), Hineman et al.
patent: 2004/0023508 (2004-02-01), Chinn et al.
patent: 2005/0153535 (2005-07-01), Hwang et al.
patent: 2006/0246711 (2006-11-01), Lahr et al.
patent: 2006/0292498 (2006-12-01), Hwang et al.
patent: 1998-0005510 (1998-03-01), None
patent: 1999-0075146 (1999-10-01), None
patent: 2003-0000695 (2003-01-01), None

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