Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-22
2007-05-22
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C438S584000, C257SE21209
Reexamination Certificate
active
11147249
ABSTRACT:
The present invention discloses improved method for manufacturing semiconductor device wherein a barrier layer is formed by thermally treating a hard mask polysilicon layer for protecting the sacrificial oxide film and the hard mask polysilicon film from damages.
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patent: 6509244 (2003-01-01), Kim et al.
patent: 6562679 (2003-05-01), Lee et al.
patent: 2000-7541 (2000-02-01), None
patent: 2003-49942 (2003-06-01), None
Darrow Justin T.
Heller Ehrman LLP
Hynix / Semiconductor Inc.
Kumar Johnny A.
Sarkar Asok K.
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