Method for fabricating stacked layer silicon nitride for low lea

Details Method for fabricating stacked layer silicon nitride for low lea Method for fabricating stacked layer silicon nitride for low lea

1994-09-14

1999-06-15

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438791, 438775, 438776, H01L 21318

Patent

active

059131497

ABSTRACT:
A method is provided for forming silicon nitride stacks. A semiconductor substrate is cleaned to remove any native oxide, and an insulative material is disposed thereon. A plurality of films are deposited superjacent the insulative material, and each of the plurality of films converted into a dielectric to form a multi-layered stack. A fill layer is formed superjacent the multi-layered stack to seal any pinholes. The fill layer is formed by at least one of low temperature chemical vapor deposition (CVD) of oxide, low temperature deposition of nitride, low temperature re-oxidation of ozone, the low temperature is at least 20.degree. C.

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