Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-04-06
2000-01-18
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438382, H01L 218244
Patent
active
060157283
ABSTRACT:
A method for fabricating a static random access memory polyload resistor comprising the steps of first providing a semiconductor substrate having a transistor formed thereon, wherein the transistor includes a gate, a source region and a gate region. Thereafter, a dielectric layer is formed over the substrate, and then photolithographic and etching processes are used to remove a portion of the dielectric layer forming a plurality of vias. Next, a polysilicon layer is formed over the substrate, and then photolithographic and etching processes are again used to pattern the polysilicon layer. Then, ions are doped to form a doped polysilicon layer. In the subsequent step, an anti-oxidation layer is formed over the substrate. Then, photolithographic and etching processes are again used to remove a portion of the polysilicon layer and the anti-oxidation layer forming interconnect regions and load resistor regions. Finally, a thermal oxidation is carried out followed by the removal of the anti-oxidation layer.
REFERENCES:
patent: 5705418 (1998-01-01), Liu
patent: 5705436 (1998-01-01), Chin et al.
Tsai Jey
Winbond Electronics Corp.
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