Method for fabricating single crystal silicon film

Details Method for fabricating single crystal silicon film Method for fabricating single crystal silicon film

2006-11-14

2006-11-14

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S486000, C438S487000

Reexamination Certificate

active

07135388

ABSTRACT:
The present invention relates to a method for fabricating a single crystal silicon thin film at the desired location to the desired size from an amorphous or polycrystalline thin film on a substrate using laser irradiation and laser beam movement along the substrate having the semiconductor thin films being irradiated. This method comprises the steps of: forming a semiconductor layer or a metal thin film on a transparent or semi-transparent substrate; forming a single crystal seed region on the substrate of the desired size by a crystallization method using laser irradiation; and converting the desired region of the semiconductor layer or metal thin film into a single crystal region, using the single crystal seed region.

REFERENCES:
patent: 5304357 (1994-04-01), Sato et al.
patent: 6113689 (2000-09-01), Moon
patent: 6326286 (2001-12-01), Park et al.

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