Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-06
2006-06-06
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S607000, C438S649000, C438S682000, C438S683000, C438S738000
Reexamination Certificate
active
07056796
ABSTRACT:
A processing method for fabricating silicide is provided. First of all, a semiconductor structure having a semiconductor surface and an insulation surface is provided. Next, an epitaxial layer on the semiconductor surface is formed. And, the semiconductor structure is treated. The treat step is that the removal rate of the insulation surface is faster than the removal rate of the epitaxial layer. Then, a metal layer on the epitaxial layer is formed. Finally, heating the epitaxial layer forms silicide. The treatment step prevents the insulation surface from the formation of the silicide so as to reduce the degradation of device characteristics.
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Smoot Stephen W.
United Microelectronics Corp.
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