Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-09
2006-05-09
Eckert, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S129000, C438S108000, C257S779000, C205S125000, C205S920000, C228S180220
Reexamination Certificate
active
07041591
ABSTRACT:
A method for fabricating a semiconductor package substrate having a plated metal layer on a conductive pad is proposed. First of all, a first resist layer is formed on a semiconductor package substrate having a plurality of traces and conductive pads on a surface thereof. The first resist layer is provided with at least an opening, such that the opening is able to contact the adjacent trace. Subsequently, a conductive film is formed in the opening, such that the conductive film can electrically connect the adjacent trace and conductive pad. After removing the first resist layer, a second resist layer having a plurality of openings is formed on the surface of the substrate to expose the conductive pad. Afterwards, an electroplating process is performed on the substrate, so that a metal layer is formed on an exposed surface of the conductive pad. The second resist layer and the conductive film are then removed from the substrate. A solder mask layer having a plurality of openings is also formed on the surface of the substrate to expose the conductive pad which has been covered by the metal layer using the electroplating process.
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Chu E-Tung
Lee Pei-Ching
Wang Xian-Zhang
Clark & Brody
Eckert George
Nixon William F.
Parker John M.
Phoenix Precision Technology Corporation
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