Method for fabricating semiconductor memory device having a capa

Details Method for fabricating semiconductor memory device having a capa Method for fabricating semiconductor memory device having a capa

1996-05-17

1997-08-26

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, H01L 218242

Patent

active

056610653

ABSTRACT:
A gate electrode and a digit line that work as a word line are formed. A second inter-layer insulation film is formed on the digit line. Thereafter, a second contact hole is formed. A polycrystal silicon film and an insulation film are successively formed. These films are patterned in predetermined shapes, and a polycrystal silicon film is formed and then anisotropically etched out by the RIE method. Just after that, the resultant structure is isotropically dry-etched so as to remove a sharp portion of the edge portion of the side wall portion, and then the insulation film is wet-etched with hydrofluoric acid. Thus, the insulation film is completely removed. As a result, a storage electrode of a cylinder-shaped stacked type capacitor is formed.

REFERENCES:
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5386382 (1995-01-01), Ahn
patent: 5536671 (1996-07-01), Park

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