Method for fabricating semiconductor memory device

Details Method for fabricating semiconductor memory device Method for fabricating semiconductor memory device

2009-06-22

2010-12-21

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S398000, C438S513000, C257SE21648

Reexamination Certificate

active

07855113

ABSTRACT:
A method for fabricating a semiconductor memory device includes: forming a lower conductive layer over a semiconductor substrate; forming an insulation layer over the lower conductive layer; etching the insulation layer to form a contact hole that exposes a portion of the lower conductive layer; forming a contact plug in the contact hole; doping the contact plug by performing a plasma doping process while varying a temperature of regions the semiconductor substrate; and forming an upper conductive layer connected with the lower conductive layer through the contact plug.

REFERENCES:
patent: 6617631 (2003-09-01), Huang
patent: 6642097 (2003-11-01), Tu
patent: 2008/0233723 (2008-09-01), Okumura et al.
patent: 2009/0068823 (2009-03-01), Hong et al.

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