Method for fabricating semiconductor memory device

Details Method for fabricating semiconductor memory device Method for fabricating semiconductor memory device

2007-01-02

2007-01-02

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S424000, C438S514000, C438S587000, C438S763000, C438S778000, C438S787000, C438S961000

Reexamination Certificate

active

10959984

ABSTRACT:
A method for fabricating a semiconductor memory device in which a logic circuit and a nonvolatile memory are provided on a semiconductor substrate includes the steps of: forming an isolation region; forming a protective film made of an insulating material over the semiconductor substrate in a logic circuit region and a nonvolatile memory region; selectively introducing impurity ions in part of the semiconductor substrate in the logic circuit region; and removing the protective film formed over the logic circuit region. The step of introducing the impurity ions is performed before the step of removing the protective film is performed.

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