Method for fabricating semiconductor memory device

Details Method for fabricating semiconductor memory device Method for fabricating semiconductor memory device

2011-07-12

2011-07-12

Cao, Phat X (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C257S330000, C257SE21546

Reexamination Certificate

active

07977188

ABSTRACT:
A method for manufacturing a semiconductor device comprises forming a first spacer layer at sidewalls of one or more gate electrodes, forming a trench by etching an isolation insulating layer exposed between the gate electrodes, forming a second spacer layer on sidewalls of the gate electrodes and an inner surface of the trench and forming an interlayer insulating layer between the gate electrodes.

REFERENCES:
patent: 7534726 (2009-05-01), Park et al.
patent: 2005/0106820 (2005-05-01), Tran

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