Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-28
2006-02-28
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S401000
Reexamination Certificate
active
07005355
ABSTRACT:
A method for manufacturing a semiconductor device includes forming a storage layer over a semiconductor body. The storage layer includes a first boundary layer, an intermediate storage layer and a second boundary layer. The storage layer is patterned so that at least some of the storage layer is removed from over a first portion of the semiconductor body and some of the storage layer is removed from over a second portion of the semiconductor body. The first portion of the semiconductor body is doped and the second portion of the semiconductor body is etched.
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Deppe Joachim
Kleint Christoph
Ludwig Christoph
Sachse Jens-Uwe
Infineon - Technologies AG
Pert Evan
Slater & Matsil L.L.P.
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