Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-02
2007-01-02
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21489, C257SE21675
Reexamination Certificate
active
10292296
ABSTRACT:
A method for forming a dual gate oxide layer, including the steps of: a) forming a gate oxide layer on a semiconductor substrate; and b) increasing a thickness of a part of the gate oxide layer by performing a decoupled plasma treatment. Additional heat processes are not necessary because the dual gate oxide layer is formed with the decoupled plasma. Also, the channel characteristic of the semiconductor device can be ensured because the silicon substrate is not damaged. Furthermore, because the threshold voltage in the cell region is increased without additional channel ion implantation, the electrical characteristic of the semiconductor device can be enhanced.
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Notice of Preliminary Rejection from Korean Intellectual Property Office dated May 31, 2004 with translation (3 pages).
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Taiwan Office Action date May 17, 2005.
Reporting letter to client explaining relevance of TW426941 for which no english abstract is available.
Lek et al., “Effects of Post-Decoupled-Plasma-Nitridation Annealing of Ultra-Thin Gate Oxide”, Proceedings of 9thIPFA 2002, pp. 232-236.
Cha Tae-Ho
Cho Heung-Jae
Lim Kwan-Yong
Park Dae-Gyu
Yeo In-Seok
Hynix / Semiconductor Inc.
Kebede Brook
Marshall & Gerstein & Borun LLP
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