Method for fabricating semiconductor devices having...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S682000, C257SE21199, C257SE21636

Reexamination Certificate

active

10978786

ABSTRACT:
The invention relates to a method for fabricating a semiconductor device having a semiconductor body that comprises a first semiconductor structure having a dielectric layer and a first conductor, and a second semiconductor structure having a dielectric layer and a second conductor, that part of the first conductor which adjoins the dielectric layer having a work function different from the work function of the corresponding part of the second conductor. In one embodiment of the invention, after the dielectric layer has been applied to the semiconductor body, a metal layer is applied to the said dielectric layer, and then a silicon layer is deposited on the metal layer and is brought into reaction with the metal layer at the location of the first semiconductor structure, forming a metal silicide. In one embodiment, those parts of the conductors which have different work functions are formed by etching a layer other than the silicon layer, in particular a metal layer, at the location of one of the two semiconductor structures. Furthermore, a further metal layer is applied over the silicon layer and is used to form a further metal silicide at the location of the second transistor. One embodiment of the invention is particularly suitable for use in CMOS technology and results in both PMOS and NMOS transistors with favorable properties.

REFERENCES:
patent: 6200834 (2001-03-01), Bronner et al.
patent: 6512296 (2003-01-01), Gauthier, Jr. et al.
patent: 6902969 (2005-06-01), Adetutu et al.
patent: 2002/0086491 (2002-07-01), Kizilyalli et al.
patent: 2002/0102802 (2002-08-01), Tan et al.
patent: 2003/0124808 (2003-07-01), Lu et al.
patent: 2003/0143825 (2003-07-01), Matsuo et al.
patent: 0 935 285 (1999-08-01), None
patent: 1 211 729 (2002-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for fabricating semiconductor devices having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor devices having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor devices having... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3817933

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.